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• W2079280720 abstract "We use self-consistent numerical calculations to study the sheet electron concentration and the mobility as functions of the doping concentration, the spacer thickness, the well width and the Al mole fraction of a selectively doped double heterojunction, using no arbitrary, a priori, assumptions, at low temperatures.For the first time we take into account two kinds of donor (shallow and deep) that coexist in the Si-doped . We study all the significant scattering mechanisms. The model, based exclusively upon the knowledge of the material and structural parameters involved, allows us to obtain the maximum conductivity for any specific structure. Our results are in a very good agreement with experiment." @default.
• W2079280720 created "2016-06-24" @default.
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• W2079280720 date "1996-07-22" @default.
• W2079280720 modified "2023-09-28" @default.
• W2079280720 title "Looking for the maximum low-temperature conductivity in selectively doped double heterojunctions" @default.
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• W2079280720 doi "https://doi.org/10.1088/0953-8984/8/30/002" @default.
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