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• W2079299737 abstract "This study simulates thermal conductivity via a carrier scattering mechanism and the related parameters are obtained based on first principles for intrinsic and doped silicon carbide (SiC) over a temperature range of 300–1450 K. The theoretical analysis results show that the thermal conductivity decreases with increasing temperature along each orientation for both cubic SiC (3C-SiC) and doped SiC. Compared with traditional calculations, the thermal conductivity of doped SiC is larger than that of intrinsic SiC in the high-temperature region. In particular, the n-type thermal conductivity is higher than the p-type thermal conductivity because of the scattering probability between electrons and the ionization impurity increasing with the temperature. Our studies are important to a further understanding of thermal transportation." @default.
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• W2079299737 date "2012-10-10" @default.
• W2079299737 modified "2023-09-23" @default.
• W2079299737 title "Electronic scattering leads to anomalous thermal conductivity of n-type cubic silicon carbide in the high-temperature region" @default.
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• W2079299737 doi "https://doi.org/10.1088/0953-8984/24/44/445802" @default.
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