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- W2079321111 abstract "The 50-Hz plasma enhanced chemical vapor deposition technique allowed the deposition of high-quality SiO 2 onto GaAs at room temperature without destroying the surface structure of amorphous-As covered GaAs, resulting in the stable SiO 2 /As/GaAs passivation system. Abrupt carrier profiles were reproducibly obtained for the Si-implanted and rapid thermal annealed GaAs using this passivation system." @default.
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- W2079321111 date "1994-07-01" @default.
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- W2079321111 title "Stable Passivation Systems for GaAs Prepared by Room-Temperature Deposition of SiO<sub>2</sub> Films" @default.
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