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- W2079352244 abstract "The metalorganic vapor phase epitaxy (MOVPE) growth of ZnSe using diethylzinc (DEZn) and tertiarybutylselenol (t-BuSeH) is described. The transition temperature from kinetically to diffusion controlled growth (Tt) was as low as 280°C, which is the lowest value for the growth using organic selenium source precursor ever reported. The surface morphology was smoother for the layers grown at 300°C than those grown at higher temperatures. Free-excition emissions were observed for all the measured layers in 4.2 K photoluminescence (PL) spectra. However, the intensity of neutral-donor-bound exciton emissions were several times larger than that of free-exciton emissions for the layers grown at 300°C, which means there reside donor impurities in t-BuSeH. ZnSSe layers were also grown using tertiarybutylmercaptan (t-BuSH) as sulfur (S) source precursor. Although Tt was 330°C for ZnS growth using DEZn and t-BuSH, the incorporation ratio of S was not drastically decreased as low as 300°C for ZnSSe due to pyrolysis enhancement by t-BuSeH." @default.
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- W2079352244 date "1993-12-01" @default.
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- W2079352244 title "Low temperature metalorganic vapor phase epitaxy of ZnSe and ZnSSe onto GaAs using tertiarybutylselenol" @default.
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- W2079352244 doi "https://doi.org/10.1016/0022-0248(93)90139-n" @default.
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