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• W2079355198 abstract "A brief report on experimental and theoretical studies of the kinetics of the laser-induced crystallization (LIC) in undoped amorphous hydrogenated silicon is presented. It is shown that the LIC occurs at a substantially lower temperature and occurs at this temperature much faster compared to the thermal crystallization in a furnace. A nanoscopic kinetic electron-related model of the LIC is presented. The model explains the experimental observations as the integral effect of a huge amount of nanoscale picosecond atomic and electronic reconstructions leading to more stable material states which are generated by electron-assisted short-lived (picosecond) large energy fluctuations in nanometer material regions." @default.
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• W2079355198 date "2002-10-22" @default.
• W2079355198 modified "2023-09-23" @default.
• W2079355198 title "Kinetics of laser-induced low-temperature crystallization of amorphous silicon" @default.
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• W2079355198 doi "https://doi.org/10.1063/1.1516875" @default.
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