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- W2079367006 abstract "A conformal diffusion barrier was formed in a high aspect ratio through-silicon via using electroless plating. Dense adsorption of Pd nanoparticle catalyst on SiO2 assisted the formation of a thin electroless Co-W-B layer, upon which an electroless Cu seed layer could be deposited. The adhesion strength of the Co-W-B film was enhanced by reducing the film thickness, and the maximum strength was obtained at a thickness of 20nm. The Co-W-B layer exhibited good barrier properties against Cu diffusion to SiO2 after annealing at 300^oC, although slight diffusion of the Pd atoms in Cu was observed." @default.
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- W2079367006 date "2013-06-01" @default.
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- W2079367006 title "Highly adhesive electroless barrier/Cu-seed formation for high aspect ratio through-Si vias" @default.
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- W2079367006 doi "https://doi.org/10.1016/j.mee.2013.01.009" @default.
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