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• W2079367282 abstract "An operation model for an amorphous In–Ga–Zn–O (a-IGZO) based thin film transistor (TFT) is studied. The model is not based on the exponential tail states employed in hydrogenated amorphous Si (a-Si:H) TFT, but on a power function of the carrier density which is observed in the TFT and Hall mobilities of a-IGZO. A 2D numerical simulator employing this model reproduced current–voltage characteristics under on operation of coplanar homojunction a-IGZO TFTs. Although the mathematical expression of the mobility is similar to the field effect mobility of a-Si:H TFT, the present model explains the temperature dependence of the on characteristics of a-IGZO TFT." @default.
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• W2079367282 date "2012-03-01" @default.
• W2079367282 modified "2023-09-25" @default.
• W2079367282 title "Operation model with carrier-density dependent mobility for amorphous In–Ga–Zn–O thin-film transistors" @default.
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• W2079367282 doi "https://doi.org/10.1016/j.tsf.2011.10.060" @default.
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