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• W2079413276 startingPage "040001" @default.
• W2079413276 abstract "The integration limit of flash memories is approaching, and many new types of memory to replace conventional flash memories have been proposed. Unlike flash memories, new nonvolatile memories do not require storage of electric charges. The possibility of phase-change random-access memories (PCRAMs) or resistive-change RAMs (ReRAMs) replacing ultrahigh-density NAND flash memories has been investigated; however, many issues remain to be overcome, making the replacement difficult. Nonetheless, ferroelectric RAMs (FeRAMs) and magnetoresistive RAMs (MRAMs) are gradually penetrating into fields where the shortcomings of flash memories, such as high operating voltage, slow rewriting speed, and limited number of rewrites, make their use inconvenient. For instance, FeRAMs are widely used in ICs that require low power consumption such as smart cards and wireless tags. MRAMs are used in many kinds of controllers in industrial equipment that require high speed and unlimited rewrite operations. For successful application of new non-volatile semiconductor memories, such memories must be practically utilized in new fields in which flash memories are not applicable, and their technologies must be further developed." @default.
• W2079413276 created "2016-06-24" @default.
• W2079413276 creator A5007759108 @default.
• W2079413276 date "2013-04-01" @default.
• W2079413276 modified "2023-10-05" @default.
• W2079413276 title "Review of Emerging New Solid-State Non-Volatile Memories" @default.
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• W2079413276 doi "https://doi.org/10.7567/jjap.52.040001" @default.
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