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- W2079415088 abstract "Hall effect and van der Pauw measurements for temperatures in the range 300–1000 K were carried out on semi-insulating (SI) 4H-SiC wafers grown by physical vapor transport (PVT) and by high temperature chemical vapor deposition. It is shown that, for semi-insulating 4H-SiC samples the temperature dependence of both resistivity and electron mobility can be measured with some samples exhibiting mobilities close to the theoretical limit determined by intervalley and phonon scattering. However, most PVT-grown samples exhibit electron mobilities an order of magnitude lower than expected. The results are explained by the electrical macrononuniformities inherent in the PVT growth process. Measurements of the temperature dependence of the photocurrent indicate that microscale potential fluctuations characteristic of other high-resistivity semiconductors are less of an issue with SI–SiC." @default.
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- W2079415088 date "2004-06-17" @default.
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- W2079415088 title "Electrical nonuniformities and their impact on the electron mobility in semi-insulating SiC crystals" @default.
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- W2079415088 doi "https://doi.org/10.1063/1.1739290" @default.
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