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• W2079459029 abstract "A unified physical model for Seebeck coefficient was presented based on the multiple-trapping and release theory for amorphous oxide semiconductor thin-film transistors. According to the proposed model, the Seebeck coefficient is attributed to the Fermi-Dirac statistics combined with the energy dependent trap density of states and the gate-voltage dependence of the quasi-Fermi level. The simulation results show that the gate voltage, energy disorder, and temperature dependent Seebeck coefficient can be well described. The calculation also shows a good agreement with the experimental data in amorphous In-Ga-Zn-O thin-film transistor." @default.
• W2079459029 created "2016-06-24" @default.
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• W2079459029 date "2014-09-08" @default.
• W2079459029 modified "2023-09-30" @default.
• W2079459029 title "A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors" @default.
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• W2079459029 doi "https://doi.org/10.1063/1.4895046" @default.
• W2079459029 hasPublicationYear "2014" @default.
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