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- W2079460091 abstract "Abstract Various alloys are interconnected with W using a Ni intermediate layer by the diffusion bonding (DB) technique. During solid-state heating in the DB technique, however, reactive diffusion occurs at the interconnection between Ni and W. In order to examine the kinetics of the reactive diffusion, sandwich Ni/W/Ni diffusion couples were isothermally annealed at temperatures of T = 1023–1173 K for various times up to t = 366 h. Owing to annealing, Ni 4 W is produced as a layer at the Ni/W interface in the diffusion couple and grows predominantly towards Ni. The thickness of the Ni 4 W layer increases in proportion to a power function of the annealing time. The exponent of the power function is close to 0.5 at T = 1173 K and gradually decreases with decreasing annealing temperature. Furthermore, grain growth takes place in Ni 4 W due to annealing. Therefore, volume diffusion is the rate-controlling process for the growth of Ni 4 W at T = 1173 K. At T 4 W/Ni interface by diffusion-induced recrystallization (DIR). The growth rate of the DIR region is much greater than the penetration rate of W into Ni by volume diffusion, and the concentration of W in the DIR region at the Ni 4 W/Ni interface is equal to the solubility of W in Ni. Such growth behavior of the DIR region was numerically analyzed using a mathematical model. The analysis indicates that the growth of the DIR region is controlled by the interface reaction at the moving boundary of the DIR region as well as the boundary diffusion along the grain boundaries across the DIR region under the present annealing conditions." @default.
- W2079460091 created "2016-06-24" @default.
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- W2079460091 date "2011-04-01" @default.
- W2079460091 modified "2023-10-16" @default.
- W2079460091 title "Solid-state reactive diffusion between Ni and W" @default.
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- W2079460091 doi "https://doi.org/10.1016/j.jallcom.2011.01.139" @default.
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