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• W2079461651 abstract "Local electrical stress in gate dielectrics using conductive atomic force microscopy (C-AFM) induces structural damage in these layers. To allow C-AFM to become a mature technique to study oxide degradation, the impact of this structural damage, i.e., protrusions and holes, on the electrical behavior must be well understood. The physical nature and growth mechanism of protrusions due to a negative substrate voltage (Vs&lt;0) is, however, debated in literature. In this work, we have studied the chemical composition of the surface protrusions using various analysis techniques (atomic force microscopy, transmission electron microscopy, and electron energy loss spectroscopy) showing that it consists of oxidized Si. A mechanism is proposed to explain the correlation between the observed surface damage and the measured current during constant voltage stress." @default.
• W2079461651 created "2016-06-24" @default.
• W2079461651 creator A5036221945 @default.
• W2079461651 creator A5049003157 @default.
• W2079461651 creator A5051398766 @default.
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• W2079461651 date "2009-07-15" @default.
• W2079461651 modified "2023-10-03" @default.
• W2079461651 title "Physical degradation of gate dielectrics induced by local electrical stress using conductive atomic force microscopy" @default.
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• W2079461651 doi "https://doi.org/10.1063/1.3153965" @default.
• W2079461651 hasPublicationYear "2009" @default.
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