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• W2079461838 startingPage "1364" @default.
• W2079461838 abstract "The influence of Fermi-level pinning at a semiconductor surface on dopant distribution is demonstrated. It is shown that surface-induced Fermi-level-pinning results in impurity drift during crystal growth by molecular-beam epitaxy. The surface electric field can be screened and reversed by appropriate background doping. Secondary-ion mass spectroscopy measurements indicate a drastic decrease of Si surface drift in ${mathrm{Al}}_{mathit{x}}$${mathrm{Ga}}_{1mathrm{ensuremath{-}}mathit{x}}$As upon screening of the dipole interaction. Reversal of the surface electric field results in a migration of Be impurities in GaAs away from the surface toward the substrate during epitaxial growth." @default.
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• W2079461838 date "1990-07-15" @default.
• W2079461838 modified "2023-10-09" @default.
• W2079461838 title "Fermi-level-pinning-induced impurity redistribution in semiconductors during epitaxial growth" @default.
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• W2079461838 doi "https://doi.org/10.1103/physrevb.42.1364" @default.
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