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• W2079493417 abstract "The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of GaAs metal-insulator-semiconductor (MIS) Schottky barrier diodes are investigated over a wide temperature range and compared with MS diodes. The effects of the insulating layer on barrier height and carrier transport are delineated by an activation energy analysis. Excess currents observed at low forward and reverse bias have also been analyzed and their cause identified. A capacitance anomaly consistently noticed in MIS Schottky barriers is resolved by stipulating a non-uniform interfacial layer, and a self-consistent model of the GaAs MIS Schottky barrier is developed by analyzing I-V and C-V data of both MIS and MS diodes." @default.
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• W2079493417 date "1979-07-01" @default.
• W2079493417 modified "2023-10-03" @default.
• W2079493417 title "Electrical characteristics of GaAs MIS Schottky diodes" @default.
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• W2079493417 doi "https://doi.org/10.1016/0038-1101(79)90135-7" @default.
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