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• W2079494933 startingPage "A7" @default.
• W2079494933 abstract "A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. The slanted ITO film exhibits an acceptable resistivity of 1.07 x 10⁻³Ω-cm underwent RTA treatment of T = 450°C, and the doping concentration and carrier mobility by Hall measurement amount to 3.7 x 10²⁰ cm⁻³ and 15.8 cm²/V-s, respectively, with an n-type doping polarity. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode. Under AM 1.5 G normal illumination, our axial p-n junction SiNW solar cell exhibits an open circuit voltage of VOC = 0.56 V, and a short circuit current of JSC = 1.54 mA/cm² with a fill factor of FF = 30%, resulting in a total power conversion efficiency of PEC = 0.26%." @default.
• W2079494933 created "2016-06-24" @default.
• W2079494933 creator A5024650162 @default.
• W2079494933 creator A5028283853 @default.
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• W2079494933 date "2012-11-09" @default.
• W2079494933 modified "2023-10-14" @default.
• W2079494933 title "Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells" @default.
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• W2079494933 doi "https://doi.org/10.1364/oe.21.0000a7" @default.
• W2079494933 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/23389277" @default.
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