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• W2079532835 abstract "A new cyclic chemical vapor deposition (CVD) process for low-temperature preparation of microcrystalline silicon and its alloys is proposed. The cycle includes an a-Si:H layer deposition step and a hydrogen-radical treatment step. The H-treatment step is carried out under closed-chamber CVD (CC-CVD). It provides conservation of Si mass at an equilibrium between H-etching and redeposition. Thus, films of high crystallinity can be achieved. The advantages are a high deposition rate, high reactive gas utilization and precise control of the film structure. In situ monitoring of the plasma emission spectrum has been used to investigate the CC-CVD process features. The films are characterized by Raman spectroscopy, scanning electron microscopy, temperature-dependent dark conductivity, and infrared transmission spectroscopy." @default.
• W2079532835 created "2016-06-24" @default.
• W2079532835 creator A5083894887 @default.
• W2079532835 creator A5091437621 @default.
• W2079532835 date "1994-08-01" @default.
• W2079532835 modified "2023-09-26" @default.
• W2079532835 title "Closed-Chamber Chemical Vapor Deposition: New Cyclic Method for Preparation of Microcrystalline Silicon Films" @default.
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• W2079532835 doi "https://doi.org/10.1143/jjap.33.4534" @default.
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