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- W2079554191 abstract "The effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon (CZ-Si) passivated in dry O2 at different temperatures was studied. It was found that the most effective passivation temperature of nitrogen-doped CZ silicon (NCZ-Si) wafers was 1000 °C, the same as that of CZ-Si wafers, but the most effective passivation time was 0.5 h, which is shorter than that of CZ-Si wafers (1 h). Furthermore, with increasing anneal time, the minority carrier lifetime of NCZ-Si decreased more quickly than that of CZ-Si, while interstitial oxygen in NCZ-Si precipitated more heavily. The experiments also showed that, during two-step (650 °C + 1050 °C) annealing, the minority carrier lifetime of NCZ-Si decreased significantly due to oxygen precipitation. It can be concluded that the crystal quality of as-grown NCZ-Si is similar to that of as-grown CZ-Si, however the minority carrier lifetime of NCZ-Si decreased more rapidly than that of CZ-Si during thermal cycles because of nitrogen enhancing oxygen precipitates." @default.
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- W2079554191 date "2003-04-01" @default.
- W2079554191 modified "2023-10-14" @default.
- W2079554191 title "Effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon" @default.
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- W2079554191 doi "https://doi.org/10.1016/s0167-9317(02)00949-8" @default.
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