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- W2079559478 abstract "The growth of GaS films on GaAs(001) surfaces by using thermal evaporation of layered-compound GaS has been investigated by Auger electron spectroscopy, low-energy electron-loss spectroscopy (LEELS), x-ray photoemission spectroscopy (XPS), and atomic force microscopy (AFM) as a function of deposition temperature. The LEELS spectrum of the films grown at lower temperatures (⩽400 °C) resembles that of a GaS single crystal, whereas that of the films grown at 450 °C reveals that GaAs surface was terminated by Ga2S3 layer. XPS spectra suggest that after annealing at 500 °C, S atoms moved from As atoms to Ga atoms to form stable Ga–S bonds at the interface and As–S bonds are observed to be less stable. The band discontinuity at the GaS/GaAs(001) interface estimated by XPS showed the straddling-type I band alignment. Surface morphology of the films studied by AFM reveals the layer-by-layer initial growth of GaS." @default.
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- W2079559478 date "1999-04-15" @default.
- W2079559478 modified "2023-10-16" @default.
- W2079559478 title "Growth temperature dependence of GaS thin films on GaAs(001) surface" @default.
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- W2079559478 doi "https://doi.org/10.1063/1.370304" @default.
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