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- W2079586763 abstract "We have performed a detailed structural and optical investigation of hydrogenated nanocrystalline silicon (nc-Si:H) thin films prepared by plasma-enhanced chemical vapor deposition. The microstructural properties of these thin films are characterized and interpreted physically based on the growth mechanism. Infrared spectroscopy reveals that the bonded hydrogen in a platelet-like configuration, which is believed to be located at grain boundaries, greatly affects oxygen incursions into nc-Si:H thin films, whereas electron spin resonance observations link these incursions to the introduction of dangling bond defects. Consequently, we propose that in nc-Si:H thin films, high bonded-hydrogen content in grain boundaries is of great importance in forming hydrogen-dense amorphous tissues around the small crystalline grains, i.e., compact grain boundary structures with good passivation. Such structures effectively prevent post-deposition oxidation of grain boundary surfaces, which might lead to the formation of dangling bond defects." @default.
- W2079586763 created "2016-06-24" @default.
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- W2079586763 date "2011-09-15" @default.
- W2079586763 modified "2023-09-23" @default.
- W2079586763 title "Bonded hydrogen in nanocrystalline silicon photovoltaic materials: Impact on structure and defect density" @default.
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- W2079586763 doi "https://doi.org/10.1063/1.3638712" @default.
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