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- W2079598812 abstract "BaTiO 3 thin films were grown on (001)SrTiO3 by reactive molecular beam epitaxy. Transmission electron microscopy studies showed that there is a high density of dislocation half-loops inside 8- and 12-nm-thick films. By thermal annealing at 1000°C, the isolated small dislocation half-loops grow and combine to form a self-assembled regular dislocation network at the film/substrate interface. Threading dislocations in the films are removed and the lattice mismatch strain in the film is nearly completely relaxed by annealing at high temperature." @default.
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- W2079598812 date "2004-09-13" @default.
- W2079598812 modified "2023-10-12" @default.
- W2079598812 title "Structural evolution of dislocation half-loops in epitaxial BaTiO3 thin films during high-temperature annealing" @default.
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- W2079598812 doi "https://doi.org/10.1063/1.1789233" @default.
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