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- W2079647346 abstract "The thermal warpage of nitrogen-doped Czochralski (NCZ) silicon wafers affected by preannealing was investigated. After preannealing at 1000 °C for 6 h, the warpage of the NCZ silicon wafers was suppressed during subsequently thermal warping tests, while the silicon wafers grown under an argon ambient (ACZ) showed an increase in warpage. Nitrogen was considered to be very effective to increase the mechanical strength of silicon wafers because of the formation of nitrogen–oxygen clusters with smaller sizes. After preannealing at 1000 °C for 16 h, both ACZ and NCZ silicon wafers showed a large increase of warpage due to the large amount of oxygen precipitation." @default.
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- W2079647346 date "1998-10-01" @default.
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- W2079647346 title "Thermal Warpage of Czochralski Silicon Wafers Grown under a Nitrogen Ambience" @default.
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- W2079647346 doi "https://doi.org/10.1002/(sici)1521-396x(199810)169:2<193::aid-pssa193>3.0.co;2-j" @default.
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