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• W2079656412 abstract "We describe a CZTSSe (Cu2ZnSn(S1−x,Sex)4) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO2, can be applied in order to reduce the interface recombination and improve the device's open-circuit voltage. Detailed characterization data including current-voltage, admittance spectroscopy, and capacitance profiling are presented in order to compare the performance of PV devices with and without the ALD layer." @default.
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• W2079656412 date "2014-07-28" @default.
• W2079656412 modified "2023-10-16" @default.
• W2079656412 title "Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer" @default.
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• W2079656412 doi "https://doi.org/10.1063/1.4891852" @default.
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