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- W2079672248 abstract "The purpose of this investigation is to study the electrical properties of the YBCO/YSZ/Si metal-insulator-semiconductor structure and the yttria-stabilized zirconia (YSZ)/Si interface. The YBCO and YSZ layers were epitaxially grown in situ on Si by pulsed laser deposition. Current-voltage measurements of devices fabricated on p-type Si(100) showed a small leakage current density at 292 K, which decreased further at 80 K. Comparison of capacitance-voltage measurements at 292 K for frequencies between 10 and 400 kHz showed a large variation of capacitance in the accumulation region demonstrating the presence of mobile ions in the YSZ layer. This variation is less pronounced at 80 K. A negative shift of about 5 V in threshold voltage from 292 to 80 K has been attributed to redistribution of charges in the YSZ buffer layer." @default.
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- W2079672248 date "1991-11-25" @default.
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- W2079672248 title "Electrical characterization of metal-insulator-semiconductor diodes fabricated from laser-ablated YBa2Cu3O7−δ /yttria-stabilized zirconia films on Si substrates" @default.
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- W2079672248 doi "https://doi.org/10.1063/1.106402" @default.
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