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- W2079677802 abstract "GaAs double-drift Read IMPATT diodes are designed for pulsed operation up to 210 GHz with extremely high current densities (225 kA/cm2). The optimisation of the active device and the applied resonator structure is carried out by the help of simulation programmes. The experimental results show RF output power levels of 0.7 W at 200 GHz and 0.25 W at 210 GHz." @default.
- W2079677802 created "2016-06-24" @default.
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- W2079677802 date "1999-10-01" @default.
- W2079677802 modified "2023-09-26" @default.
- W2079677802 title "Characterisation of 210 GHz Pulsed GaAs IMPATT Diode" @default.
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- W2079677802 doi "https://doi.org/10.1109/euma.1999.338438" @default.
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