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- W2079685026 abstract "Boron doped silicon was grown epitaxially onto high resistivity silicon substrates at temperatures between 1100°C and 1200°C. The resulting diodes (area 5–10 cm2) often did not exhibit the expected breakdown voltage of more than 1000 V. By measuring the temperature distribution across the surface of the diode while a reverse current is flowing, we always could find “hot-spots”. They are responsible for the low breakdown voltage. These “hot-spots” were investigated both optically and with an electron microscope. In most cases we found at these “hot-spots” tri-pyramids, raised-triangles or hexagonals. The reason for these growth defects could not be detected by investigations with electron diffraction or electron microprobe. Contaminating the surface before epitaxy with different impurities showed that probably non-metallic impurities or metallic impurities, which form low melting eutectics with silicon, are responsible for the “hot-spots” and the low breakdown voltages." @default.
- W2079685026 created "2016-06-24" @default.
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- W2079685026 date "1971-05-01" @default.
- W2079685026 modified "2023-10-14" @default.
- W2079685026 title "Relationship between hot-spots and growth defects in epitaxially grown p-n junctions" @default.
- W2079685026 cites W1982122112 @default.
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- W2079685026 doi "https://doi.org/10.1016/0022-0248(71)90221-1" @default.
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