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- W2079700191 abstract "A self-assembled array of nanometer-sized holes in alumina has been adapted as a mask for conventional, broad-area, ion implantation. The mask pattern, made up of nanoholes arranged in a two-dimensional triangular array with a 100 nm period and a 55 nm diameter pore size, has been successfully transferred onto single crystal (100) SrTiO3 substrates using 200 and 500 keV energy Pt ion bombardments, at fluences sufficient to amorphize the exposed areas. The amorphized material was removed by selective chemical etching resulting in a periodic array of holes about 55 nm in diameter and 115 nm deep. This parallel, nonlithographic approach is adaptable to submicron depth, variable array geometry and scale, and to any material where a selective etch can be found for the irradiated volume." @default.
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- W2079700191 date "2002-12-09" @default.
- W2079700191 modified "2023-09-26" @default.
- W2079700191 title "Ultrahigh-density, nonlithographic, sub-100 nm pattern transfer by ion implantation and selective chemical etching" @default.
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- W2079700191 doi "https://doi.org/10.1063/1.1527693" @default.
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