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• W2079718877 abstract "Band-gap engineering is a powerful technique for the design of new semiconductor materials and devices. Heterojunctions and modern growth techniques, such as molecular beam epitaxy, allow band diagrams with nearly arbitrary and continuous band-gap variations to be made. The transport properties of electrons and holes can be independently and continuously tuned for a given application. A new generation of devices with unique capabilities, ranging from solid-state photomultipliers to resonant tunneling transistors, is emerging from this approach." @default.
• W2079718877 created "2016-06-24" @default.
• W2079718877 creator A5066671589 @default.
• W2079718877 date "1987-01-09" @default.
• W2079718877 modified "2023-10-02" @default.
• W2079718877 title "Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices" @default.
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• W2079718877 doi "https://doi.org/10.1126/science.235.4785.172" @default.
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