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- W2079728900 abstract "The injection of hot carriers from Si into SiO_{2} in various MOSFET structures is characterized via direct measurements of gate current. A method of mapping gate currents as a function of both gate and drain bias potentials is described. The deterioration of device parameters with hot-electron injection is also characterized, and it is proposed that the rate of aging is a function not only of the injection and trapping efficiencies, but also of the physical location of the trapped charge." @default.
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- W2079728900 date "1984-10-01" @default.
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- W2079728900 title "Some aspects of hot-electron aging in MOSFET's" @default.
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- W2079728900 doi "https://doi.org/10.1109/t-ed.1984.21720" @default.
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