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- W2079745415 abstract "Experimental studies on a vertical metal-diamond-silicon switch structure have been conducted for potential pulsed power applications. Both the dc current-voltage characteristics and the transient switching response have been measured for a range of voltages. With a 1 μm diamond film, the switch has been seen to withstand electric fields up to 1.8 MV/cm. Our results show a polarity dependence which can be associated with current injection at the asymmetric contacts. Polarity effects were also observed in the presence of e-beam excitation, and arise due to nonuniform carrier generation near the diamond-silicon interface. Our switching transients were seen to follow the shape of the e-beam for a negative bias at the silicon substrate. For positive voltage values exceeding about 80 V however, the switch is seen to go into a persistent-photocurrent mode. This effect is a result of free carrier trapping within diamond and is enhanced by the double injection process." @default.
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- W2079745415 date "1992-11-15" @default.
- W2079745415 modified "2023-09-26" @default.
- W2079745415 title "Studies of high field conduction in diamond for electron beam controlled switching" @default.
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- W2079745415 doi "https://doi.org/10.1063/1.352090" @default.
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