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• W2079748319 abstract "We measure end-of-line polysilicon waveguide propagation losses of ~6-15 dB/cm across the telecommunication O-, E-, S-, C- and L-bands in a process representative of high-volume product integration. The lowest loss of 6.2 dB/cm is measured at 1550 nm in a polysilicon waveguide with a 120 nm x 350 nm core geometry. The reported waveguide characteristics are measured after the thermal cycling of the full CMOS electronics process that results in a 32% increase in the extracted material loss relative to the as-crystallized waveguide samples. The measured loss spectra are fit to an absorption model using defect state parameters to identify the dominant loss mechanism in the end-of-line and as-crystallized polysilicon waveguides." @default.
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• W2079748319 date "2012-03-14" @default.
• W2079748319 modified "2023-09-26" @default.
• W2079748319 title "Low-loss polysilicon waveguides fabricated in an emulated high-volume electronics process" @default.
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• W2079748319 doi "https://doi.org/10.1364/oe.20.007243" @default.
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