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• W2079757983 abstract "Cu, CuO, and Cu–CuO bilayer films were deposited with radio-frequency sputtering by controlling the gas flow ratio and the performance of the pentacene thin-film transistor (TFT) with these films as a source/drain (S/D) electrode was measured. With an gas flow ratio higher than 1, CuO film was obtained with a resistivity of and a work function of close to the highest occupied molecular orbital energy level of pentacene. Pentacene TFT with CuO film deposited at showed better performance than Cu film because the barrier height between the electrode and the semiconductor layer was smaller. The pentacene TFTs with CuO/Cu and Cu/CuO bilayer S/D electrodes were fabricated through the shadow mask patterning, and the CuO/Cu structure showed better performance than Cu or Cu/CuO because hole injection was through the CuO layer. It was confirmed that the edge effect with a shadow mask had an influence on the electrode pattern formation due to the infiltration of the film-forming species through the microgap." @default.
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• W2079757983 date "2009-01-01" @default.
• W2079757983 modified "2023-10-16" @default.
• W2079757983 title "Effect of Cu, CuO, and Cu–CuO Bilayer Source/Drain Electrodes on the Performance of the Pentacene Thin-Film Transistor" @default.
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• W2079757983 doi "https://doi.org/10.1149/1.3147264" @default.
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