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• W2079759940 abstract "Epitaxial thin film ${mathrm{CuGaSe}}_{2}$ and ${mathrm{CuInSe}}_{2}$ samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in ${mathrm{CuInSe}}_{2}$, whereas, in ${mathrm{CuGaSe}}_{2}$, the only observed vacancy defect is the Cu-Se divacancy." @default.
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• W2079759940 date "2012-08-06" @default.
• W2079759940 modified "2023-09-27" @default.
• W2079759940 title "Vacancy defects in epitaxial thin film<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:msub><mml:mi mathvariant=bold>CuGaSe</mml:mi><mml:mn mathvariant=bold>2</mml:mn></mml:msub></mml:math>and<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:msub><mml:mi mathvariant=bold>CuInSe</mml:mi><mml:mn mathvariant=bold>2</mml:mn></mml:msub></mml:math>" @default.
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• W2079759940 doi "https://doi.org/10.1103/physrevb.86.064102" @default.
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