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• W2079778757 abstract "We employed Raman scattering spectroscopy and stress measurements to study the stress property in SiGe alloys deposited by rapid thermal process, very low pressure chemical vapor deposition method. During deposition, strain existing in the film causes Ge atoms to distribute inhomogeneously. This effect can be suppressed by changing the reaction parameters, such as increasing substrate temperature or Ge composition. High hydrogen atom coverage on the growing surface or stress relaxation of the alloy will reduce this effect." @default.
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• W2079778757 date "1996-06-01" @default.
• W2079778757 modified "2023-10-14" @default.
• W2079778757 title "Stress Property of SiGe Alloy Deposited by Very Low Pressure Chemical Vapor Deposition" @default.
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• W2079778757 doi "https://doi.org/10.1143/jjap.35.3327" @default.
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