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- W2079790250 abstract "A simple model of the inversion layer is used to compute the electron mobility in quantized silicon surface channels for the case of many occupied electric subbands. Interband scattering is included. Important approximations in the calculation are a triangular surface potential well and a $ensuremath{delta}$-function form for the scattering potential. The results are presented over a broad range of gate voltage and temperature, and the effects of interband scattering are examined. In general, the theoretical predictions are in fairly good agreement with the experimental behavior." @default.
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- W2079790250 title "Conduction in quantized silicon inversion layers with many occupied electric subbands" @default.
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- W2079790250 doi "https://doi.org/10.1103/physrevb.9.1664" @default.
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