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- W2079790874 abstract "Measurements have been made with dual gate MOS field effect transistors when immersed in liquid nitrogen. It has been found that such devices are suitable for wideband and tuned rf amplifiers, with improved characteristics. Simple practical amplifier circuits and their characteristics are described." @default.
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- W2079790874 date "1971-01-01" @default.
- W2079790874 modified "2023-09-27" @default.
- W2079790874 title "Operation of dual gate MOS field effect transistors at 77 K and use in rf and video amplifiers" @default.
- W2079790874 cites W2087329710 @default.
- W2079790874 doi "https://doi.org/10.1088/0022-3735/4/1/015" @default.
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