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• W2079792662 abstract "A high-performance 256K /spl times/ 1bit DRAM with double-level Al technology is described. It has a small die size of 8.5 /spl times/ 4.0 mm/SUP 2/, an access time of 90 ns, and a soft error rate of less than 1000 FITs. The first and second Al layers are used as bit lines and word lines, respectively. Double-level Al technology is also applied to periphery circuit regions and contributes to a 15 percent reduction of die size in conjunction with a simplified sense-restore circuit. A compact memory cell (10.9 /spl times/ 6.1/spl mu/m /SUP 2/) with a storage capacitance of over 50 fF is obtained through the use of wafer stepping and dry etch techniques." @default.
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• W2079792662 date "1983-10-01" @default.
• W2079792662 modified "2023-09-24" @default.
• W2079792662 title "A 90 ns 256K x 1 bit DRAM with double-level Al technology" @default.
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• W2079792662 doi "https://doi.org/10.1109/jssc.1983.1051974" @default.
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