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• W2079800481 abstract "Interdiffusion and phase formation in thin film couples of vanadium and aluminium were studied by Rutherford backscattering spectrometry, Auger electron spectroscopy, X-ray diffraction and transmission electron microscopy analyses after heat treatment in the temperature range 400–700°C. The deposition parameters of the vanadium evaporation were varied systematically, yielding films with varying oxygen content. The rate constant for growth of the phase VAl3 was determined and is compared with earlier results. No systematic variation in the growth rate was observed for vanadium films containing less than 15 at.% O. The oxygen content of the vanadium films has a strong influence on the interdiffusion for concentrations above 15 at.% when a strong inhibition of the formation of VAl3 is observed. This is believed to be due to a layer of Al2O3 which forms at the interface between the two films." @default.
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• W2079800481 date "1984-04-01" @default.
• W2079800481 modified "2023-09-23" @default.
• W2079800481 title "Phase formation and diffusion in V/Al thin film couples prepared under varying deposition conditions" @default.
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• W2079800481 doi "https://doi.org/10.1016/0040-6090(84)90124-x" @default.
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