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• W2079820651 abstract "Enhancements in AlGaN/GaN high-electron-mobility transistor (HEMT) performance have been realized through ultrathin (4 nm) AlN passivation layers, formed by atomic layer epitaxy (ALE). A combination of ex situ and in situ surface cleans prepare the surface for deposition of ALE AlN. HEMTs passivated by high crystallinity AlN, grown at 500 <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$^{circ}{rm C}$</tex></formula> , show improvements in 2-D electron gas sheet carrier density, gate leakage current, off-state drain leakage current, subthreshold slope, and breakdown voltage. In addition, degradation of dynamic on resistance during pulsed off-state voltage switching stress is suppressed by <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>${sim}{50%}$</tex></formula> compared with HEMTs passivated by conventional plasma enhanced chemical vapor deposition <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>${rm SiN}_{x}$</tex></formula> ." @default.
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• W2079820651 date "2013-09-01" @default.
• W2079820651 modified "2023-10-16" @default.
• W2079820651 title "Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation" @default.
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• W2079820651 doi "https://doi.org/10.1109/led.2013.2274429" @default.
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