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- W2079840119 abstract "The kinetics of light-enhanced vaporization (LEV) of arsenic trisulfide at ≈ 200°C due to surface photooxidation is measured by the rotating-sector method. The LEV kinetics resembles the photoconductivity kinetics in this material with two time constants: ≈ 3 × 10−5 s and ≈ 5 × 10−2 s. The results are interpreted in terms of photocarriers which are created in a thin layer below the As2S3 surface and migrate to the surface, where they catalyze the oxidation reaction. This reaction yields As4O6 and S2 molecules, which vaporize rapidly due to their high vapor pressure. The LEV rate is found to depend on the substrate material, but the substrate does not influence the photocarrier time constants. Die Kinetik der durch Oberflächen-Photooxidation bedingten lichterhöhten Verdam pfung (LEV) von Arsentrisulfid bei ≈ 200°C wird mit der Methode des rotierenden Sektors untersucht. Die LEV-Kinetik gleicht der Photoleitungskinetik in diesem Material, wobei zwei Zeitkonstanten von ≈ 3 × 10−5 s und ≈ 5 × 10−2 s auftreten. Die Ergebnisse werden mittels Photoladungsträgern interpretiert, die in einer dünnen Schicht unterhalb der As2S3-Oberfläche erzeugt werden und zur Oberfläche wandern, wo sie die Oxidationsreaktion katalysieren. Diese Reaktion ergibt As4O6-und S2-Moleküle, die auf Grund ihres hohen Dampfdruckes rasch verdampfen. Es wird gefunden, daß die LEV-Rate vom Substratmaterial abhängt, wobei aber das Substrat die Zeitkonstanten der Photoladungsträger nicht beeinflußt." @default.
- W2079840119 created "2016-06-24" @default.
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- W2079840119 date "1977-08-16" @default.
- W2079840119 modified "2023-09-27" @default.
- W2079840119 title "The kinetics of the light-enhanced vaporization of amorphous As2S3 thin films" @default.
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- W2079840119 doi "https://doi.org/10.1002/pssa.2210420239" @default.
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