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- W2079852416 abstract "The deposition of in situ boron doped silicon films from boron trichloride BCl3 and silane SiH4 in a conventional low-pressure chemical vapour deposition reactor has been studied for high boron doping levels and two kinds of substrates (SiO2 and Si3N4). On the basis of transmission electron microscopy and X-ray photoelectron spectroscopy results, these films appear to be highly sensitive to the local electronic environment of both substrate and deposited atoms. Indeed, beyond a critical doping level, this material becomes more and more amorphous, due to the occurrence of a particular organization of boron atoms in the silicon matrix. This behaviour results in a lowering of the well-known boron enhancement effect for deposition rate and crystalline fraction." @default.
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- W2079852416 date "2004-01-01" @default.
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- W2079852416 title "Influence of dopant concentration and type of substrate on the local organization of low-pressure chemical vapour deposition in situ boron doped silicon films from silane and boron trichloride" @default.
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- W2079852416 doi "https://doi.org/10.1016/j.tsf.2003.10.010" @default.
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