FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2079856687> ?p ?o ?g. }

• W2079856687 abstract "A pMOS transistor can be used as an electrostatic discharge (ESD) protection device; however, due to its higher turn-on resistance, it has a poor ESD robustness than that of nMOS transistors. Nevertheless, for a high-voltage (HV) p-channel laterally-diffused MOS (pLDMOS), which has a low impact-ionization rate, almost a non-snapback phenomenon (high V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>h</sub> value) and then with a high latch-up (LU) immunity. What is happening if a pLDMOS embedded with an HV silicon-controlled rectifier (ESCR)? In this paper, a novel HV pLDMOS-ESCR is proposed by implanted an extra N <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> diffusion region in the drain-side among a pLDMOS. Meanwhile, the location of the N <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> diffusion region is changed in order to investigate the impact on ESD capability. And, in this work, three different unit finger widths will be evaluated. Eventually, the I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>t2</sub> value of “pnp”-type among HV pMOS-ESCR will be four times higher than that of “npn”-type at least, in the same time, the V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>h</sub> value of “pnp”-type HVpMOS-ESCR higher than that of “npn”-type, too. Therefore, the “pnp”-type HV pLDMOS-ESCR structure is an excellent structure in the HV technology due to its high ESD and latch-up immunities." @default.
• W2079856687 created "2016-06-24" @default.
• W2079856687 creator A5025906275 @default.
• W2079856687 creator A5055764522 @default.
• W2079856687 creator A5058584138 @default.
• W2079856687 creator A5059650503 @default.
• W2079856687 creator A5075858739 @default.
• W2079856687 creator A5033483329 @default.
• W2079856687 date "2014-05-01" @default.
• W2079856687 modified "2023-09-24" @default.
• W2079856687 title "Robust design of HV pLDMOS-ESCR structures in a 60-V BCD process" @default.
• W2079856687 cites W1528865748 @default.
• W2079856687 cites W1565374689 @default.
• W2079856687 cites W2007850381 @default.
• W2079856687 cites W2019014742 @default.
• W2079856687 cites W2024616015 @default.
• W2079856687 cites W2066994444 @default.
• W2079856687 cites W2100582672 @default.
• W2079856687 cites W2109148991 @default.
• W2079856687 cites W2119337839 @default.
• W2079856687 cites W2129842285 @default.
• W2079856687 cites W2130094094 @default.
• W2079856687 cites W2130390619 @default.
• W2079856687 cites W2131291751 @default.
• W2079856687 cites W2135817061 @default.
• W2079856687 cites W2137820798 @default.
• W2079856687 cites W2140166545 @default.
• W2079856687 cites W2144642572 @default.
• W2079856687 cites W2149586217 @default.
• W2079856687 cites W2154557470 @default.
• W2079856687 cites W2160833098 @default.
• W2079856687 cites W2162052181 @default.
• W2079856687 cites W2538727642 @default.
• W2079856687 doi "https://doi.org/10.1109/isne.2014.6839325" @default.
• W2079856687 hasPublicationYear "2014" @default.
• W2079856687 type Work @default.
• W2079856687 sameAs 2079856687 @default.
• W2079856687 citedByCount "4" @default.
• W2079856687 countsByYear W20798566872015 @default.
• W2079856687 countsByYear W20798566872016 @default.
• W2079856687 crossrefType "proceedings-article" @default.
• W2079856687 hasAuthorship W2079856687A5025906275 @default.
• W2079856687 hasAuthorship W2079856687A5033483329 @default.
• W2079856687 hasAuthorship W2079856687A5055764522 @default.
• W2079856687 hasAuthorship W2079856687A5058584138 @default.
• W2079856687 hasAuthorship W2079856687A5059650503 @default.
• W2079856687 hasAuthorship W2079856687A5075858739 @default.
• W2079856687 hasConcept C104317684 @default.
• W2079856687 hasConcept C119599485 @default.
• W2079856687 hasConcept C121332964 @default.
• W2079856687 hasConcept C127413603 @default.
• W2079856687 hasConcept C165801399 @default.
• W2079856687 hasConcept C172385210 @default.
• W2079856687 hasConcept C185592680 @default.
• W2079856687 hasConcept C197162436 @default.
• W2079856687 hasConcept C27050352 @default.
• W2079856687 hasConcept C41008148 @default.
• W2079856687 hasConcept C55493867 @default.
• W2079856687 hasConcept C63479239 @default.
• W2079856687 hasConceptScore W2079856687C104317684 @default.
• W2079856687 hasConceptScore W2079856687C119599485 @default.
• W2079856687 hasConceptScore W2079856687C121332964 @default.
• W2079856687 hasConceptScore W2079856687C127413603 @default.
• W2079856687 hasConceptScore W2079856687C165801399 @default.
• W2079856687 hasConceptScore W2079856687C172385210 @default.
• W2079856687 hasConceptScore W2079856687C185592680 @default.
• W2079856687 hasConceptScore W2079856687C197162436 @default.
• W2079856687 hasConceptScore W2079856687C27050352 @default.
• W2079856687 hasConceptScore W2079856687C41008148 @default.
• W2079856687 hasConceptScore W2079856687C55493867 @default.
• W2079856687 hasConceptScore W2079856687C63479239 @default.
• W2079856687 hasLocation W20798566871 @default.
• W2079856687 hasOpenAccess W2079856687 @default.
• W2079856687 hasPrimaryLocation W20798566871 @default.
• W2079856687 hasRelatedWork W1966209964 @default.
• W2079856687 hasRelatedWork W2006330903 @default.
• W2079856687 hasRelatedWork W2028237735 @default.
• W2079856687 hasRelatedWork W2071865194 @default.
• W2079856687 hasRelatedWork W2082944690 @default.
• W2079856687 hasRelatedWork W2118243209 @default.
• W2079856687 hasRelatedWork W2138701250 @default.
• W2079856687 hasRelatedWork W2147978085 @default.
• W2079856687 hasRelatedWork W2909648144 @default.
• W2079856687 hasRelatedWork W4283644214 @default.
• W2079856687 isParatext "false" @default.
• W2079856687 isRetracted "false" @default.
• W2079856687 magId "2079856687" @default.
• W2079856687 workType "article" @default.