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• W2079862854 endingPage "L1360" @default.
• W2079862854 startingPage "L1360" @default.
• W2079862854 abstract "The carrier mobility of phosphorus-doped laser crystallized polycrystalline silicon (poly-Si) films was investigated. An analysis of the free carrier optical absorption spectra gave the carrier mobility, 6–11 cm 2 /V·s, for the laser energy between 140 (the crystallization threshold) and 280 mJ/cm 2 . The mobility increased as the temperature decreased from 473 K to 77 K because of the reduced carrier scattering by the lattice vibration as in single crystalline silicon. On the other hand, the carrier mobility obtained by the Hall effect measurements increased from 1 to 5 cm 2 /V·s as the laser energy increased. The mobility for samples crystallized near the crystalline threshold decreased as the temperature decreased from 473 K to 77 K. This is probably caused by lack of the thermal excitation energy for crossing the energy barrier at the grain boundary." @default.
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• W2079862854 date "1997-10-01" @default.
• W2079862854 modified "2023-09-23" @default.
• W2079862854 title "Crystalline Properties of Laser Crystallized Silicon Films" @default.
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• W2079862854 doi "https://doi.org/10.1143/jjap.36.l1360" @default.
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