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- W2079864894 abstract "Abstract Low pressure MOVPE has been developed to prepare planar InP/InGaAs pin-FET photoreceivers in a two-step epitaxy. For the first time, a growth process is described which uses a regrowth over selectively diffused areas to optimize both the pin diode and the FET, without losing planarity. Problems arising from interfacial doping and the regrowth over stressed areas have been investigated. After a short description of the device technology the properties of the pin diode and the FET are discussed." @default.
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- W2079864894 date "1991-01-01" @default.
- W2079864894 modified "2023-09-26" @default.
- W2079864894 title "Two-step MOVPE growth for planar InP/InGaAs/InP pin-FET combinations with locally diffused buffer layer" @default.
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- W2079864894 doi "https://doi.org/10.1016/0022-0248(91)90567-o" @default.
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