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- W2079891503 abstract "We investigated the optimum growth condition and initial growth process of AlN on 6H-SiC(0 0 0 1) substrates prepared by H2 etching in the plasma-assisted molecular beam epitaxy (MBE). In X-ray rocking curve measurements, a small full-width at half-maximum of about 50 arcsec was obtained for a 150 nm thick AlN layer. The AlN layers have contained a lot of pits over a grown surface. Pit densities were markedly decreased by reducing the amount of residual impurities (O, OH and H2O) in an MBE chamber. A very low pit density of 104–105 cm−2 was realized." @default.
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- W2079891503 date "2004-05-01" @default.
- W2079891503 modified "2023-10-14" @default.
- W2079891503 title "Growth of high-quality AlN with low pit density on SiC substrates" @default.
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- W2079891503 doi "https://doi.org/10.1016/j.jcrysgro.2004.02.014" @default.
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