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- W2079894242 abstract "Silicon carbide (SiC) is a IV-IV compound semiconductor material with a wide band gap. Semiconductor electronic devices and circuits made from SiC are presently developed for high-temperature, high-power, and high-radiation conditions, in which conventional semiconductors cannot be adequately performed. In this paper, SiH4 and C2H2 were used to synthesize SiC nano-whiskers. Metal Ni was the catalyst. SiC nano-whiskers were grown by vapor-liquid-solid mechanism. The effects of the H2 flow rate, growth temperature, catalyst thickness and growth pressure to grow SiC nano-whiskers were studied. 3C-SiC thin film and nano-tips can be synthesized by controlling the growth conditions." @default.
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- W2079894242 date "2010-01-01" @default.
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- W2079894242 title "Factors Affecting the Growth of SiC Nano-whiskers" @default.
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- W2079894242 doi "https://doi.org/10.1016/s1005-0302(10)60172-7" @default.
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