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- W2079897368 abstract "The influence of the semiconductor doping type over the electrical properties of Al/SiNx:H/In0.53Ga0.47As metal-insulator-semiconductor (MIS) devices has been studied using capacitance-voltage (C-V) and current-voltage (I-V) measurements. The C-V data show that the SiNx:H/p-In0.53Ga0.47As interface is more defective than the SiNx:H/n-In0.53Ga0.47As one. In both n- and p-type MIS structures, the interface trap density (Dit), the electrical breakdown field (EB) and the resistivity (ρ) are highly dependent on the insulator composition. On the other hand, rapid thermal annealing treatments at temperatures up to 600 °C induce a gradual improvement of both interface and SiNx:H bulk quality on n-type MIS devices, whereas a continuous degradation of the SiNx:H/p-In0.53Ga0.47As interface properties is observed. Zinc out-diffusion from p-In0.53Ga0.47As towards the insulator-semiconductor interface could explain the poorest electrical characteristics of the MIS structures based on a p-type semiconductor." @default.
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- W2079897368 date "2000-06-30" @default.
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- W2079897368 title "Comparison between n-type and p-type Al/SiN<sub><i>x</i></sub>:H/In<sub>0.53</sub>Ga<sub>0.47</sub>As devices deposited by electron cyclotron resonance technique" @default.
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