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• W2079919231 abstract "We report on the growth of n- and p-doped Germanium (Ge) on Ge substrates by Metal-Organic Vapor Phase Epitaxy (MOVPE). Iso-butyl germane, a liquid metal-organic source less toxic than Germane, is used as Ge precursor. We demonstrate the p-doping of Germanium by MOVPE using Trimethylgallium. The influence of the growth parameters for n and p-type doping is studied in order to optimize the morphology, the structural and the electrical properties of the Ge layers. The controlled growth of p and n doped Ge layers opens the possibility to realize totally epitaxially grown Ge diodes with improved performances, for example, for solar cell applications." @default.
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• W2079919231 date "2011-04-01" @default.
• W2079919231 modified "2023-09-30" @default.
• W2079919231 title "p and n-type germanium layers grown using iso-butyl germane in a III-V metal-organic vapor phase epitaxy reactor" @default.
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• W2079919231 doi "https://doi.org/10.1016/j.tsf.2011.02.019" @default.
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