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• W2079949415 abstract "We investigated micro- and nano-fabrication of wide band-gap semiconductor gallium nitride (GaN) using a femtosecond (fs) laser. Nanoscale craters were successfully formed by wet-chemical-assisted fs-laser ablation, in which the laser beam is focused onto a single-crystal GaN substrate in a hydrochloric acid (HCl) solution. This allows efficient removal of ablation debris produced by chemical reactions during ablation, resulting in high-quality ablation. However, a two-step processing method involving irradiation by a fs-laser beam in air followed by wet etching, distorts the shape of the crater because of residual debris. The threshold fluence for wet-chemical-assisted fs-laser ablation is lower than that for fs-laser ablation in air, which is advantageous for improving fabrication resolution since it reduces thermal effects. We have fabricated craters as small as 510 nm by using a high numerical aperture (NA) objective lens with an NA of 0.73. Furthermore, we have formed three-dimensional hollow microchannels in GaN by fs-laser direct-writing in HCl solution." @default.
• W2079949415 created "2016-06-24" @default.
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• W2079949415 date "2009-09-01" @default.
• W2079949415 modified "2023-09-23" @default.
• W2079949415 title "Fabrication of microchannels in single-crystal GaN by wet-chemical-assisted femtosecond-laser ablation" @default.
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• W2079949415 doi "https://doi.org/10.1016/j.apsusc.2009.04.159" @default.
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