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- W2079969088 abstract "Copper deposition was investigated on electrochemically etched mesoporous silicon epilayers of pore diameter 7 nm, porosity 45% and surface area 500 m2 cm−3 by immersion plating in an aqueous solution containing Cu2+ ions. When the layers were immersed in a 0.1 M CuSO4 · 5H2O aqueous solution for different time-periods ranging from 1 to 60 min, elemental copper was deposited on the surface. Fourier transform infrared (FTIR) spectroscopy in transmittance mode was carried out on copper deposited porous silicon (PS) samples to infer the changes in the surface bonding of the PS. It was clearly observed from x-ray diffraction patterns and FTIR spectra that the reduction of copper ion on PS was accompanied by gradual and finally complete oxidation of the PS epilayers surface. Scanning electron microscopy has been used to study the morphology of the copper aggregates at the PS epilayers surface." @default.
- W2079969088 created "2016-06-24" @default.
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- W2079969088 date "2007-04-19" @default.
- W2079969088 modified "2023-10-17" @default.
- W2079969088 title "Nucleation and growth of copper on mesoporous silicon by immersion plating" @default.
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- W2079969088 doi "https://doi.org/10.1088/0022-3727/40/9/030" @default.
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