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• W2080141640 endingPage "234503" @default.
• W2080141640 startingPage "234503" @default.
• W2080141640 abstract "InAs/GaSb and similar materials systems have generated great interest as a heterojunction for tunnel field effect transistors (TFETs) due to favorable band alignment. However, little is currently understood about how such TFETs are affected by materials defects and nonidealities. We present measurements of the conductance slope for various InAs/GaSb heterojunctions via two-terminal electrical measurements, which removes three-terminal parasitics and enables direct study on the effect of microstructure on tunnelling. Using this, we can predict how subthreshold swings in TFETs can depend on microstructure. We also demonstrate growth and electrical characterization for structures grown by metalorganic chemical vapor deposition (MOCVD)—a generally more scalable process compared with molecular beam epitaxy (MBE). We determine that misfit dislocations and point defects near the interface can lead to energy states in the band-gap and local band bending that result in trap-assisted leakage routes and nonuniform band alignment across the junction area that lower the steepness of the conductance slope. Despite the small lattice mismatch, misfit dislocations still form in InAs on GaSb due to relaxation as a result of large strain from intermixed compositions. This can be circumvented by growing GaSb on InAs, straining the GaSb underlayer, or lowering the InAs growth temperature in the region of the interface. The conductance slope can also be improved by annealing the samples at higher temperatures, which we believe acts to annihilate point defects and average out major fluctuations in band alignment across the interface. Using a combination of these techniques, we can greatly improve the steepness of the conductance slope which could result in steeper subthreshold swings in TFETs in the future." @default.
• W2080141640 created "2016-06-24" @default.
• W2080141640 creator A5005790097 @default.
• W2080141640 creator A5053185962 @default.
• W2080141640 date "2014-06-21" @default.
• W2080141640 modified "2023-10-14" @default.
• W2080141640 title "Microstructure and conductance-slope of InAs/GaSb tunnel diodes" @default.
• W2080141640 cites W1970566893 @default.
• W2080141640 cites W1974498454 @default.
• W2080141640 cites W1975301362 @default.
• W2080141640 cites W1977286652 @default.
• W2080141640 cites W1983613839 @default.
• W2080141640 cites W1984699484 @default.
• W2080141640 cites W1988442407 @default.
• W2080141640 cites W1989975118 @default.
• W2080141640 cites W2005313224 @default.
• W2080141640 cites W2008925883 @default.
• W2080141640 cites W2009624223 @default.
• W2080141640 cites W2011251612 @default.
• W2080141640 cites W2015395120 @default.
• W2080141640 cites W2016465556 @default.
• W2080141640 cites W2016785852 @default.
• W2080141640 cites W2021178131 @default.
• W2080141640 cites W2027025351 @default.
• W2080141640 cites W2032197740 @default.
• W2080141640 cites W2041934107 @default.
• W2080141640 cites W2042797280 @default.
• W2080141640 cites W2048771473 @default.
• W2080141640 cites W2056228486 @default.
• W2080141640 cites W2058976624 @default.
• W2080141640 cites W2061547571 @default.
• W2080141640 cites W2067732881 @default.
• W2080141640 cites W2070421968 @default.
• W2080141640 cites W2093299247 @default.
• W2080141640 cites W2094003872 @default.
• W2080141640 cites W2100601283 @default.
• W2080141640 cites W2101317125 @default.
• W2080141640 cites W2111852168 @default.
• W2080141640 cites W2111959064 @default.
• W2080141640 cites W2116430513 @default.
• W2080141640 cites W2117642605 @default.
• W2080141640 cites W2122244629 @default.
• W2080141640 cites W2141837964 @default.
• W2080141640 cites W2147042703 @default.
• W2080141640 cites W2148610461 @default.
• W2080141640 cites W2159339949 @default.
• W2080141640 cites W2257520754 @default.
• W2080141640 doi "https://doi.org/10.1063/1.4883756" @default.
• W2080141640 hasPublicationYear "2014" @default.
• W2080141640 type Work @default.
• W2080141640 sameAs 2080141640 @default.
• W2080141640 citedByCount "16" @default.
• W2080141640 countsByYear W20801416402014 @default.
• W2080141640 countsByYear W20801416402015 @default.
• W2080141640 countsByYear W20801416402016 @default.
• W2080141640 countsByYear W20801416402018 @default.
• W2080141640 countsByYear W20801416402020 @default.
• W2080141640 countsByYear W20801416402021 @default.
• W2080141640 crossrefType "journal-article" @default.
• W2080141640 hasAuthorship W2080141640A5005790097 @default.
• W2080141640 hasAuthorship W2080141640A5053185962 @default.
• W2080141640 hasBestOaLocation W20801416402 @default.
• W2080141640 hasConcept C110738630 @default.
• W2080141640 hasConcept C120398109 @default.
• W2080141640 hasConcept C121332964 @default.
• W2080141640 hasConcept C121932024 @default.
• W2080141640 hasConcept C159985019 @default.
• W2080141640 hasConcept C171250308 @default.
• W2080141640 hasConcept C175665537 @default.
• W2080141640 hasConcept C181966813 @default.
• W2080141640 hasConcept C19181183 @default.
• W2080141640 hasConcept C192562407 @default.
• W2080141640 hasConcept C26873012 @default.
• W2080141640 hasConcept C2779227376 @default.
• W2080141640 hasConcept C3792809 @default.
• W2080141640 hasConcept C49040817 @default.
• W2080141640 hasConcept C57410435 @default.
• W2080141640 hasConcept C78434282 @default.
• W2080141640 hasConcept C79794668 @default.
• W2080141640 hasConcept C87976508 @default.
• W2080141640 hasConceptScore W2080141640C110738630 @default.
• W2080141640 hasConceptScore W2080141640C120398109 @default.
• W2080141640 hasConceptScore W2080141640C121332964 @default.
• W2080141640 hasConceptScore W2080141640C121932024 @default.
• W2080141640 hasConceptScore W2080141640C159985019 @default.
• W2080141640 hasConceptScore W2080141640C171250308 @default.
• W2080141640 hasConceptScore W2080141640C175665537 @default.
• W2080141640 hasConceptScore W2080141640C181966813 @default.
• W2080141640 hasConceptScore W2080141640C19181183 @default.
• W2080141640 hasConceptScore W2080141640C192562407 @default.
• W2080141640 hasConceptScore W2080141640C26873012 @default.
• W2080141640 hasConceptScore W2080141640C2779227376 @default.
• W2080141640 hasConceptScore W2080141640C3792809 @default.
• W2080141640 hasConceptScore W2080141640C49040817 @default.
• W2080141640 hasConceptScore W2080141640C57410435 @default.
• W2080141640 hasConceptScore W2080141640C78434282 @default.
• W2080141640 hasConceptScore W2080141640C79794668 @default.
• W2080141640 hasConceptScore W2080141640C87976508 @default.

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